High Energy Power FET
MTP4N50E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced...
Description
MTP4N50E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor — Absorbs High Energy in the Avalanche Mode
Source−to−Drain Diode Recovery Time Comparable to Discrete Fast
Recovery Diode
http://onsemi.com
TMOS POWER FET 4.0 AMPERES, 500 VOLTS
RDS(on) = 1.5 W
TO−220AB CASE 221A−06
Style 5
D
G
®
S
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006...
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