D1274

Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification s Features q High collector to base voltage VCBO q High-speed switching q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage 2SD1274 2SD1274A 2SD1274B VCBO 150 200 250 2SD1274 Collector to 2SD1274A emitter voltage 2SD1274B VCES 150 200 250 Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25°C dissipation Ta=25°C VCEO VEBO IC PC 80 6 5 40 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A W ˚C ˚C 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics (TC=25˚C) Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Fall time Symbol ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf Conditions VCB = 150V, IE = 0 VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 ...