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MCH3477 Dataheets PDF



Part Number MCH3477
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MCH3477 DatasheetMCH3477 Datasheet (PDF)

MCH3477 Power MOSFET 20V, 38mΩ, 4.5A, Single N-Channel www.onsemi.com Features  High Speed Switching  1.8V Drive  ESD Diode-Protected Gate  Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction T.

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MCH3477 Power MOSFET 20V, 38mΩ, 4.5A, Single N-Channel www.onsemi.com Features  High Speed Switching  1.8V Drive  ESD Diode-Protected Gate  Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA Value 20 12 4.5 18 Unit V V A A 1.0 150 55 to +150 W C C Value Unit 125 C/W VDSS 20V RDS(on) Max 38 mΩ@4.5V 61 mΩ@2.5V 99 mΩ@1.8V ID Max 4.5A Electrical Connection N-Channel 3 1 1 : Gate 2 : Source 3 : Drain 2 Packing Type:TL Marking LOT No. LOT No. FJ TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January 2015 - Rev. 2 1 Publication Order Number : MCH3477/D Electrical Characteristics at Ta  25C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Forward Diode Voltage V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD MCH3477 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=4.5A IS=4.5A, VGS=0V min 20 Value typ 0.4 2.0 3.4 29 43 69 410 84 59 7.5 26 38 32 5.1 0.7 1.7 0.78 max 1 10 1.3 38 61 99 1.2 Unit V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VIN 4.5V 0V VIN PW=10s D.C.≤1% G VDD=10V ID=2A RL=5 D VOUT P.G 50 MCH3477 S www.onsemi.com 2 MCH3477 www.onsemi.com 3 MCH3477 www.onsemi.com 4 Package Dimensions MCH3477-TL-H / MCH3477-TL-W MCPH3 CASE 419AQ ISSUE O Unit : mm 1 : Gate 2 : Source 3 : Drain MCH3477 Recommended Soldering Footprint 0.4 2.1 0.6 ORDERING INFORMATION Device MCH3477-TL-H MCH3477-T.


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