NDPL180N10B

NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel www.onsemi.com Features Ultra Low On-Resistance Low Gate Charge High Speed Switching 100% Avalanche Test Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Storage Temperature VDSS VGSS ID IDL IDP PD Tj Tstg Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds IS EAS TL Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *2 Symbol RθJC RθJA Note: *1 VDD=48V, L=100μH, IAV=70A (Fig.1) *2 Insertion mounted Value 100 ±20 180 100 600 2.1 200 175 −55 to +175 100 451 260 Unit V V A A A W °C °C A mJ °C Value 0.75 71.4 Unit °C/W VDSS 100V RDS(on) Max 3.0mΩ@ 15V 3.5mΩ@ 10V ID Max 180A Electrical Connection N-Channel 2 1 : Gate 1 2 : Drain 3 : Source 3 Marking 180N10 B LOT No. 1 2 3 TO-220-3L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 M...