N-Channel Power MOSFET
NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Ha...
Description
NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Power Dissipation – RqJC Steady State, TC = 25°C Pulsed Drain Current Continuous Source Current (Body Diode)
VDSS VGS ID
ID
PD
IDM IS
400 ±20 1.7 0.4
V V A
1.1 0.25 A
39 2.0 W
6.9 1.6 1.7 0.4
A A
Single Pulse Drain−to−Source Avalanche Energy, ID = 1 A
Maximum Temperature for Soldering Leads
EAS TL
120 mJ 260 °C
Operating Junction and Storage Temperature
TJ, TSTG −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. IS = 1.7 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDD02N40
Junction−to−Ambient Steady State NDD02N40 (Note 4)
NDD02N40−1 (Note 3) NDT02N40 (Note 4) NDT02N40 (Note 5)
RqJC RqJA
3.2 °C/W
°C/W 39 96 62 151
3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces) 5. S...
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