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NDBA180N10B

ON Semiconductor
Part Number NDBA180N10B
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 15, 2016
Detailed Description NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Cha...
Datasheet PDF File NDBA180N10B PDF File

NDBA180N10B
NDBA180N10B

Overview
NDBA180N10B Power MOSFET 100V, 2.
8mΩ, 180A, N-Channel www.
onsemi.
com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C VDSS VGSS ID IDL IDP PD Junction Temperature Tj Storage Temperature Tstg Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds IS EAS TL Value 100 ±...


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