Power MOSFET
MTW6N100E
Preferred Device
Power MOSFET 6 Amps, 1000 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced te...
Description
MTW6N100E
Preferred Device
Power MOSFET 6 Amps, 1000 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation Derate above 25°C
VDSS VDGR
VGS VGSM
ID ID IDM PD
1000 1000
± 20 ± 40 6.0 4.2 18
180 1.43
Operating and Storage Temp...
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