Power MOSFET
MTP6P20E
Preferred Device
Power MOSFET 6 Amps, 200 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand hig...
Description
MTP6P20E
Preferred Device
Power MOSFET 6 Amps, 200 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
VDSS
200
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
200
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs)
ID ID IDM
6.0 3.9 21
Total Power Dissipation Derate above 25°C
PD 75 0.6
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case − Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ fr...
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