MTD1312

MTD1312 Advance Information Power MOSFET 25 Amps, 30 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode Is Characterized for Use In Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VDSS VDGR VGS VGSM 30 30 ± 20 ± 20 Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Unit Vdc Vdc Vdc Vpk °C This document contains information on a new product. Specifications and information herein are subject to change without notice. http://onsemi.com 25 AMPERES 30 VOLTS RDS(on) = 16 mΩ N−Channel D G S MARKING DIAGRAM 12 3 4 CASE 369A DPAK STYLE 2 Y = Year WW = Work Week MTD1312 = Device Code YWW MTD 1312 PIN ASSIGNMENT 4 Drain 1 23 Gate Drain Source ORDERING INFORMATION Device Package Shipping MTD1312T4 DPAK 2500 Tape & Reel © Semico...