FDJ127P

FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications Battery management Load switch Features –4.1 A, –20 V. RDS(ON) = 60 mΩ @ VGS = –4.5 V RDS(ON) = 85 mΩ @ VGS = –2.5 V RDS(ON) = 133 mΩ @ VGS = –1.8 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD TJ, TSTG Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .C FDJ127P 7’’ Bottom Drain 4 5 6 Ratings –20 ±8 –4.1 –16 1.6 –55 to +150 77 Tape width 8mm 3 2 1 Units V V A W °C °C/W Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDJ127P Rev B2 (W) FDJ127P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain C...