FDU3580

FDD3580/FDU3580 August 2001 FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V Low gate charge (34nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability D D G S DT(O-TP(-TOD2AO5--KP2-2A5K2) GDS I-PAK (TO-251AA) G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current-Continuous (Note 1a) Maximum Drain Current – Pulsed Maximum Power Dissipation @TC = 25oC TA = 25oC TA = 25oC (Note 1) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case RθJA Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size FDD3580 FDD3580 13’’ FDU3580 FDU3580 Tube Ratings 80 ± 20 7.7 50 42 3.8 1.6 −55 to +175 3.5 96 Tape width 16mm N/A S Units V V A W °C °C/W °C/...