SSF2301B

SSF2301B 20V P-Channel MOSFET DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package APPLICATIONS ●PWM applications ●Load switch ●Power management S Schematic Diagram Marking and Pin Assignment SOT23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2301B SSF2301B SOT23 Ø180mm Tape Width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±8 -2.8 -10 1.25 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W www.goodark.com Page 1 of 4 Rev.1.0 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V SSF2301B 20V P-Channel MOSFET M...