IRF7453PbF

SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 250V PD- 95307 IRF7453PbF HEXFET® Power MOSFET RDS(on) max ID 0.23W@VGS = 10V 2.2A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design (See App. Note AN1001) S l Fully Characterized Avalanche Voltage G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 2.2 1.7 17 2.5 0.02 ± 30 13 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through † are on page 8 www.irf.com Typ. ––– ––– Max. 20 50 Units °C/W 1 10/12/04 IRF7453PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 250 –––...