FDC796N

FDC796N February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications DC/DC converter Power management Load switch Features 12.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge High power and current handling capability Fast switching speed. G S S SuperSOT-6TM FLMP S S S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size .796 FDC796N 7’’ Bottom Drain 1 2 3 Ratings 30 ± 20 12.5 40 2 1.1 −55 to +150 60 111 0.5 Tape width 8mm 6 5 4 Units V A W °C °C/W Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDC796N Rev D (W) FDC796N Electrical Characteristics Symbol Parameter TA ...