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IRL3715ZCSPbF Dataheets PDF



Part Number IRL3715ZCSPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3715ZCSPbF DatasheetIRL3715ZCSPbF Datasheet (PDF)

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Maximum .

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) „ PD - 95220 IRL3715ZCSPbF IRL3715ZCLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 11mΩ 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL Max. 20 ± 20 50 … 36 … 200 45 23 0.30 -55 to + 175 300 (1.6mm from case) Typ. ––– ––– Max. 3.33 40 Units V A W W/°C °C Units °C/W Notes  through … are on page 11 www.irf.com 1 04/27/04 IRL3715ZCS/LPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Min. 20 ––– ––– Typ. ––– 0.014 9.2 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 11 mΩ VGS = 10V, ID = 15A ƒ VGS(th) ∆VGS(th)/∆TJ Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 1.65 ––– 12.4 2.1 -5.2 15.5 2.55 ––– VGS = 4.5V, ID = 12A ƒ V VDS = VGS, ID = 250µA mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 31 ––– ––– ––– 7.0 11 S VDS = 10V, ID = 12A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– 2.1 ––– VDS = 10V ––– 0.9 ––– nC VGS = 4.5V ––– 2.3 ––– ID = 12A ––– 1.7 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.2 ––– Qoss td(on) tr td(off) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ––– 3.7 ––– nC VDS = 10V, VGS = 0V ––– 7.1 ––– VDD = 10V, VGS = 4.5V ƒ ––– 44 ––– ID = 12A ––– 11 ––– ns Clamped Inductive Load tf Fall Time ––– 4.6 ––– Ciss Input Capacitance ––– 870 ––– VGS = 0V Coss Output Capacitance ––– 270 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy‚ IAR Avalanche Current  EAR Repetitive Avalanche Energy  Typ. ––– ––– ––– Max. 44 12 4.5 Units mJ A mJ Diode Characteristics Parameter IS Continuous Source Current Min. Typ. Max. Units Conditions ––– ––– 50 … MOSFET symbol D (Body Diode) ISM Pulsed Source Current ––– ––– 200 A showing the integral reverse G (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 p-n junction diode. S ––– ––– 1.0 V TJ = 25°C, IS = 12A, VGS = 0V ƒ ––– 9.1 14 ns TJ = 25°C, IF = 12A, VDD = 10V ––– 2.2 3.3 nC di/dt = 100A/µs ƒ www.irf.com ID, Drain-to-Source Current (A) 1000 100 VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 1 0.1 60µs PULSE WIDTH Tj = 25°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) IRL3715ZCS/LPbF 1000 100 VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 1 0.1 60µs PULSE WIDTH Tj = 175°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (Α) 1000 TJ = 25°C 100 TJ = 175°C 10 3.0 VDS = 10V 60µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) 10.0 Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 30A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 C, Capacitance (pF) IRL3715ZCS/LPbF 10000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 Ciss Coss 100 1 Crss 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 VGS, Gate-to-Source Voltage (V) 12 ID= 12A 10 VDS= 20V VDS= 10V 8 6 4 2 0 0 4 8 12 QG Total Gate Charge (nC) 16 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage ISD, Reverse Drain Current (A) 1000.0 100.0 10.0 TJ = 175°C 1.0 TJ = 25°C 0.1 0.0 VGS = 0V 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) 2.0 Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID, Drain-to-Source Current (A) 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec 10 Tc = 25°C Tj = 175°C Single Pulse 1 01 1msec 10msec 10 100 VDS , Drain-toSo.


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