Document
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l Lead-Free
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount)
PD - 95220
IRL3715ZCSPbF IRL3715ZCLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 11mΩ 7.0nC
D2Pak IRL3715ZCS
TO-262 IRL3715ZCL
Max. 20 ± 20
50
36
200
45 23 0.30 -55 to + 175
300 (1.6mm from case)
Typ. –––
–––
Max. 3.33
40
Units V A
W W/°C
°C
Units °C/W
Notes through
are on page 11 www.irf.com
1
04/27/04
IRL3715ZCS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ∆ΒVDSS/∆TJ RDS(on)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Min. 20 ––– –––
Typ. ––– 0.014 9.2
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA 11 mΩ VGS = 10V, ID = 15A
VGS(th) ∆VGS(th)/∆TJ
Gate Threshold Voltage Gate Threshold Voltage Coefficient
––– 1.65 –––
12.4 2.1 -5.2
15.5 2.55 –––
VGS = 4.5V, ID = 12A V VDS = VGS, ID = 250µA mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance Qg Total Gate Charge
31 ––– ––– ––– 7.0 11
S VDS = 10V, ID = 12A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 2.1 –––
VDS = 10V
––– 0.9 ––– nC VGS = 4.5V
––– 2.3 –––
ID = 12A
––– 1.7 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.2 –––
Qoss td(on) tr td(off)
Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time
––– 3.7 ––– nC VDS = 10V, VGS = 0V
––– 7.1 –––
VDD = 10V, VGS = 4.5V
––– 44 –––
ID = 12A
––– 11 ––– ns Clamped Inductive Load
tf Fall Time
––– 4.6 –––
Ciss Input Capacitance
––– 870 –––
VGS = 0V
Coss Output Capacitance
––– 270 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 44 12 4.5
Units mJ A mJ
Diode Characteristics
Parameter IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 50
MOSFET symbol
D
(Body Diode) ISM Pulsed Source Current
––– ––– 200
A showing the integral reverse
G
(Body Diode) VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
p-n junction diode.
S
––– ––– 1.0 V TJ = 25°C, IS = 12A, VGS = 0V
––– 9.1 14 ns TJ = 25°C, IF = 12A, VDD = 10V ––– 2.2 3.3 nC di/dt = 100A/µs
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ID, Drain-to-Source Current (A)
1000 100
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
1 0.1
60µs PULSE WIDTH Tj = 25°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
IRL3715ZCS/LPbF
1000 100
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10 3.0V
1 0.1
60µs PULSE WIDTH Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
1000
TJ = 25°C 100 TJ = 175°C
10 3.0
VDS = 10V 60µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 30A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
3
C, Capacitance (pF)
IRL3715ZCS/LPbF
10000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd Coss = Cds + Cgd
1000
Ciss
Coss
100 1
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100
VGS, Gate-to-Source Voltage (V)
12 ID= 12A
10
VDS= 20V VDS= 10V
8
6
4
2
0 0 4 8 12
QG Total Gate Charge (nC)
16
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
1000.0
100.0
10.0
TJ = 175°C
1.0 TJ = 25°C
0.1 0.0
VGS = 0V
0.5 1.0 1.5 VSD, Source-toDrain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode Forward Voltage
4
ID, Drain-to-Source Current (A)
1000 100
OPERATION IN THIS AREA LIMITED BY RDS(on)
100µsec 10
Tc = 25°C Tj = 175°C Single Pulse 1
01
1msec 10msec 10 100
VDS , Drain-toSo.