IRL3715ZCSPbF

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) „ PD - 95220 IRL3715ZCSPbF IRL3715ZCLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 11mΩ 7.0nC D2Pak IRL3715ZCS TO-262 IRL3715ZCL Max. 20 ± 20 50 … 36 … 200 45 23 0.30 -55 to + 175 300 (1.6mm from case) Typ. ––– ––– Max. 3.33 40 Units V A W W/°C °C Units °C/W Notes  through … are on page 11 www.irf.com 1 04/27/04 IRL3715ZCS/LPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Min. 20 ––– ––– Typ. ––– 0.014 9.2 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 11 mΩ VGS = 10V, ID = 15A ƒ VGS(th) ∆VGS(th)/∆TJ Gate Threshold Voltage Gate Threshold Voltage Coefficient...