IRLU4343-701PbF

PD - 95394A DIGITAL AUDIO MOSFET IRLR4343PbF IRLU4343PbF Features l Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175°C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Multiple Package Options l Lead-Free IRLU4343-701PbF Key Parameters VDS 55 RDS(ON) typ. @ VGS = 10V 42 RDS(ON) typ. @ VGS = 4.5V 57 Qg typ. 28 TJ max 175 V m: m: nC °C D D-Pak I-Pak G IRLR4343 IRLU4343 I-Pak Leadform 701 S IRLU4343-701 Refer to page 10 for package outline Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Drain-to-Source Voltage Gate-to-Sou...