DatasheetsPDF.com

IRL1104PbF Dataheets PDF



Part Number IRL1104PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL1104PbF DatasheetIRL1104PbF Datasheet (PDF)

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, pr.

  IRL1104PbF   IRL1104PbF


Document
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 95404 IRL1104PbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 0.008Ω S ID = 104A… TO-220AB Max. 104… 74 416 167 1.1 ±16 340 62 17 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– Typ. –––– 0.50 –––– Max. 0.9 –––– 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 1 6/17/04 IRL1104PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resis- VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 40 ––– ––– ––– 1.0 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– V 0.04 ––– V/°C ––– 0.008 ––– 0.012 Ω ––– ––– V ––– ––– S ––– 25 ––– 250 µA ––– 100 ––– -100 nA ––– 68 ––– 24 nC ––– 33 18 ––– 257 ––– 32 ––– ns 64 ––– 4.5 ––– 7.5 ––– 3445 ––– 1065 ––– 270 ––– nH pF Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 62A „ VGS = 4.5V, ID = 52A „ VDS = VGS, ID = 250µA VDS = 25V, ID = 62A VDS = 40V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 150°C VGS = 16V VGS = -16V ID = 62A VDS = 32V VGS = 4.5V, See Fig. 6 and 13 „ VDD = 20V ID = 62A RG = 3.6Ω, VGS = 4.5V RD = 0.4Ω, See Fig. 10 „ Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 G D S Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions ––– ––– 104… ––– ––– 416 A MOSFET symbol showing the integral reverse p-n junction diode. G ––– ––– 1.3 ––– 84 126 V TJ = 25°C, IS = 62A, VGS = 0V „ ns TJ = 25°C, IF = 62A ––– 223 335 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 15V, starting TJ = 25°C, L = 0.18mH RG = 25Ω, IAS =62A. (See Figure 12) ƒ ISD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 www.irf.com I D, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 10 2.7V 20µs PULSE WIDTH 1 TJ = 25 °C 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 TJ = 25°C TJ = 175° C 10 V DS= 2550V 20µs PULSE WIDTH 1 2.0 4.0 6.0 8.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) IRL1104PbF 1000 100 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 2.7V 10 20µs PULSE WIDTH 1 TJ= 175 °C 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typ.


IRFB4215PbF IRL1104PbF IRL3103D1PBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)