Document
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC RθCS RθJA
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Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 95404
IRL1104PbF
HEXFET® Power MOSFET
D
VDSS = 40V
G RDS(on) = 0.008Ω S ID = 104A
TO-220AB
Max. 104
74 416 167 1.1 ±16 340 62 17 5.0 -55 to + 175
300 (1.6mm from case) 10 lbf•in (1.1N•m)
Min. –––– –––– ––––
Typ. –––– 0.50 ––––
Max. 0.9 –––– 62
Units
A
W W/°C
V mJ A mJ V/ns
°C
Units
°C/W
1
6/17/04
IRL1104PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resis-
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
Min. 40 ––– ––– ––– 1.0 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
––– ––– –––
Typ. Max. Units
––– ––– V
0.04 ––– V/°C
––– 0.008 ––– 0.012
Ω
––– ––– V
––– ––– S
––– 25 ––– 250 µA
––– 100 ––– -100 nA
––– 68
––– 24 nC
––– 33
18 –––
257 ––– 32 ––– ns
64 –––
4.5
7.5 3445 ––– 1065 ––– 270 –––
nH pF
Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 62A VGS = 4.5V, ID = 52A VDS = VGS, ID = 250µA VDS = 25V, ID = 62A VDS = 40V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 150°C VGS = 16V VGS = -16V ID = 62A VDS = 32V VGS = 4.5V, See Fig. 6 and 13 VDD = 20V ID = 62A RG = 3.6Ω, VGS = 4.5V RD = 0.4Ω, See Fig. 10 Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5
G
D S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
104
416
A
MOSFET symbol
showing the integral reverse p-n junction diode.
G
––– ––– 1.3 ––– 84 126
V TJ = 25°C, IS = 62A, VGS = 0V ns TJ = 25°C, IF = 62A
––– 223 335 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D S
Notes: Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25°C, L = 0.18mH
RG = 25Ω, IAS =62A. (See Figure 12) ISD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
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I D, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000 100
VGS TOP 15V
10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH 1 TJ = 25 °C 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000 100
TJ = 25°C
TJ = 175° C
10
V DS= 2550V 20µs PULSE WIDTH 1 2.0 4.0 6.0 8.0 10.0 VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics www.irf.com
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D, Drain-to-Source Current (A)
IRL1104PbF
1000 100
VGS TOP 15V
10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V
2.7V
10
20µs PULSE WIDTH 1 TJ= 175 °C 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typ.