Power MOSFET
NTTD2P02R2
Power MOSFET −2.4 Amps, −20 Volts
Dual P−Channel Micro8
Features
• Ultra Low RDS(on) • Higher Efficiency Ext...
Description
NTTD2P02R2
Power MOSFET −2.4 Amps, −20 Volts
Dual P−Channel Micro8
Features
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided
Applications
Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.)
Thermal Resistance − Junction−to−Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.)
Operating and Storage Temperature Range
VDSS VGS
RθJA PD ID ID IDM
RθJA PD ID ID IDM TJ, Tstg
−20 "8.0
V V
160 0.78 −2.4 −1.92 −20
°C/W W A A A
88 1.42 −3.25 −2.6 −30
−55 to +150
°C/W W A A A
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = −5.0 Apk, L = 28 mH, RG = 25 Ω)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
EAS TL
350 mJ 260 °C
1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), S...
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