NTP8G206N

NTP8G206N Power GaN Cascode Transistor 600 V, 150 mW Features Fast Switching Extremely Low Qrr Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Power Dissipation – RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms VDSS VGS ID PD IDM 600 V ±18 V 17 A 12 96 W 60 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Lead Temperature for Soldering Leads TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State Symbol RqJC RqJA Value 1.55 62 Unit °C/W °C/W www.onsemi.com V(BR)DSS 600 V RDS(ON) TYP 150 mW @ 10 V N−Channel MOSFET D (3) G (1) 4 S (2,4) MARKING DIAGRAM & PIN ASSIGNMENT 4 Source 1 2 3 TO−220 CASE 221A−09 STYLE 10 NTP8G206NG AYWW 1 Gate 3 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 2 Source ORDERING INFORMATION Device Package Shipping NTP8G206NG TO−220 (Pb−Free) 50 Units / Rail © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 2 1 Publication Order Number: NTP8G206N/...