Power MOSFET
NTMS4P01R2
Power MOSFET −4.5 Amps, −12 Volts
P−Channel Enhancement−Mode Single SO−8 Package
Features
• High Density Powe...
Description
NTMS4P01R2
Power MOSFET −4.5 Amps, −12 Volts
P−Channel Enhancement−Mode Single SO−8 Package
Features
High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
Miniature SO−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature Drain−to−Source Avalanche Energy Specified Mounting Information for the SO−8 Package is Provided
Applications
Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS Please See the Table on the Following Page
http://onsemi.com
VDSS −12 V
RDS(ON) TYP 30 mΩ @ −4.5 V
ID MAX −4.5 A
Single P−Channel D
G S
8
1
SO−8 CASE 751 STYLE 13
MARKING DIAGRAM & PIN ASSIGNMENT
N.C.
1 2
Source
3
Source 4
Gate
E4P01 LYWW
8 Drain 7 Drain 6 Drain 5 Drain
Top View
E4P01 L Y WW
= Device Code = Assembly Location = Year = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMS4P01R2
SO−8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number: NTMS4P01R2/D
NTMS4P01R2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
VDSS
Drain−to−Gate Voltage (RGS = 1.0 mW)
VDGR
Gate−to−Source Voltage − Continuous
VGS
Thermal Resistance −
Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ ...
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