NTMFS4825NFE

NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb−Free Device Applications CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA VDSS 30 V VGS ±20 V TA = 25°C ID 29 A TA = 85°C 21 Power Dissipation RqJA (Note 1) Continuous Drain Current 10 sec RqJA v TA = 25°C TA = 25°C TA = 85°C PD ID 2.74 W 47 A 34 Power Dissipation RqJA, t v 10 sec Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 85°C PD ID 7.3 W 17 A 12 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC = 85°C PD ID 0.95 W 171 A 123 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 96.2 W 288 A Current limited by package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxpkg TJ, TSTG IS dV/dt EAS TL 100 −40 to +150 120 6 375 260 A °C A V/ns mJ °C Str...