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NTLUS3A90PZC

ON Semiconductor

Power MOSFET

NTLUS3A90PZC Power MOSFET −20 V, −5.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Pac...


ON Semiconductor

NTLUS3A90PZC

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Description
NTLUS3A90PZC Power MOSFET −20 V, −5.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving Lowest RDS(on) in 1.6x1.6 Package ESD Protected These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch PA Switch and Battery Switch Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Steady Current (Note 1) State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 ±8.0 −4.0 −2.9 −5.0 1.5 V V A W t ≤ 5 s TA = 25°C 2.3 Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C ID −2.6 A −1.9 Power Dissipation (Note 2) TA = 25°C PD 0.6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −0.84 A Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above th...




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