IRF3707ZCSPbF

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current PD - 95464A IRF3707ZCSPbF IRF3707ZCLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.5m 9.7nC D2Pak TO-262 IRF3707ZCSPbF IRF3707ZCLPbF Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case gRθJA Junction-to-Ambient (PCB Mount) Notes  through † are on page 11 www.irf.com Max. 30 ± 20 59h 42h 230 57 28 0.38 -55 to + 175 300 (1.6mm from case) x x10 lbf in (1.1 N m) Typ. ––– ––– Max. 2.653 40 Units V A W W/°C °C Units °C/W 1 05/12/08 IRF3707ZCS/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.023 –––...