IRF3711ZPbF

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95530 IRF3711ZPbF IRF3711ZSPbF IRF3711ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 6.0m: 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds fMounting Torque, 6-32 or M3 screw Thermal Resistance Parameter iRθJC Junction-to-Case RθCS fCase-to-Sink, Flat Greased Surface fiÃRθJA Junction-to-Ambient giRθJA Junction-to-Ambient (PCB Mount) Notes  through ‡ are on page 12 www.irf.com TO-220AB IRF3711Z D2Pak IRF3711ZS Max. 20 ± 20 92 h 65 h 380 79 40 0.53 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. ––– 0.50 ––– ––– Max. 1.89 ––– 62 40 TO-262 IRF3711ZL Units V A W W/°C °C Units °C/W 1 7/20/04 IRF3711Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ...