SMPS MOSFET
PD - 95580
SMPS MOSFET
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Tele...
Description
PD - 95580
SMPS MOSFET
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free
VDSS
20V
IRL3714PbF IRL3714SPbF IRL3714LPbF
HEXFET® Power MOSFET
RDS(on) max
20mΩ
ID
36A
Benefits
l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL3714
D2Pak IRL3714S
TO-262 IRL3714L
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C
TJ , TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Max. 20
± 20 36 31
140 47 33 0.31 -55 to + 175
Units V V
A
W W W/°C °C
Typ. ––– 0.50 ––– –––
Max. 3.2 ––– 62 40
Units °C/W
Notes through are on page 11 www.irf.com
1
07/20/04
IRL3714/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
20 ––– ––– –––
––– 0.022 15
21
––– V –...
Similar Datasheet