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IRL3716SPbF Dataheets PDF



Part Number IRL3716SPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3716SPbF DatasheetIRL3716SPbF Datasheet (PDF)

PD - 95448 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring l Lead-Free VDSS 20V IRL3716PbF IRL3716SPbF IRL3716LPbF HEXFET® Power MOSFET RDS(on) max 4.0mΩ ID 180A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3716 Absolute Maximum Ratings Symbol.

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PD - 95448 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring l Lead-Free VDSS 20V IRL3716PbF IRL3716SPbF IRL3716LPbF HEXFET® Power MOSFET RDS(on) max 4.0mΩ ID 180A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3716 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range D2Pak IRL3716S Max. 20 ± 20 180† 130 720 210 100 1.4 -55 to + 175 TO-262 IRL3716L Units V V A W W W/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 0.72 ––– 62 40 Units °C/W Notes  through † are on page 11 www.irf.com 1 6/22/04 IRL3716/3716S/3716LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 20 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 0.021 3.0 4.0 ––– ––– ––– ––– ––– ––– V ––– V/°C 4.0 4.8 mΩ 3.0 V 20 250 µA 200 -200 nA VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 90A ƒ VGS = 4.5V, ID = 72A ƒ VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Qg Qgs Qgd Qoss td(on) tr td(off) Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time 100 ––– ––– ––– 53 79 ––– 17 26 ––– 24 35 ––– 50 75 ––– 18 ––– ––– 140 ––– ––– 38 ––– S VDS = 10V, ID = 72A ID = 72A nC VDS = 16V VGS = 4.5V VGS = 0V, VDS = 10V VDD = 10V ns ID = 72A RG = 3.9Ω tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– 36 ––– VGS = 4.5V ƒ ––– 5090 ––– VGS = 0V ––– 3440 ––– pF VDS = 10V ––– 560 ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 640 72 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 Min. Typ. Max. Units Conditions ––– ––– 180† A ––– ––– 720 MOSFET symbol showing the integral reverse p-n junction diode. G D S ––– 0.93 1.3 V TJ = 25°C, IS = 72A, VGS = 0V ƒ ––– 0.80 ––– TJ = 125°C, IS = 72A, VGS = 0V ƒ ––– 180 280 ns TJ = 25°C, IF = 72A, VR=20V ––– 87 130 nC di/dt = 100A/µs ƒ ––– 190 280 ––– 85 130 ns TJ = 125°C, IF = 72A, VR=20V nC di/dt = 100A/µs ƒ www.irf.com ID, Drain-to-Source Current (A) IRL3716/3716S/3716LPbF 10000 1000 VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 10 1 0.1 2.5V 20µs PULSE WIDTH Tj = 25°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 10000 1000 VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 2.5V 10 1 0.1 20µs PULSE WIDTH Tj = 175°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (Α) 1000.00 100.00 TJ = 25°C TJ = 175°C 10.00 2.0 VDS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V) 8.0 Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D = 180A 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL3716/3716S/3716LPbF VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 100000 10000 1000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss Crss 16 ID = 72A 12 8 4 VDS = 16V 100 1 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 0 0 30 60 90 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 150 ISD, Reverse Drain Current (A) 1000 TJ = 175 ° C 100 10000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) 10 TJ.


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