Document
PD - 95448
SMPS MOSFET
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring l Lead-Free
VDSS
20V
IRL3716PbF IRL3716SPbF IRL3716LPbF
HEXFET® Power MOSFET
RDS(on) max
4.0mΩ
ID
180A
Benefits l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage
and Current
TO-220AB IRL3716
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
TJ , TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
Junction and Storage Temperature Range
D2Pak IRL3716S
Max. 20
± 20 180 130 720 210 100 1.4 -55 to + 175
TO-262 IRL3716L
Units V V
A
W W W/°C °C
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ. ––– 0.50 ––– –––
Max. 0.72 ––– 62 40
Units °C/W
Notes through are on page 11 www.irf.com
1
6/22/04
IRL3716/3716S/3716LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
20 ––– ––– ––– 1.0 ––– ––– ––– –––
––– 0.021 3.0 4.0 ––– ––– ––– ––– –––
––– V
––– V/°C
4.0 4.8
mΩ
3.0 V
20 250
µA
200 -200
nA
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 90A VGS = 4.5V, ID = 72A VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Qg Qgs Qgd Qoss td(on) tr td(off)
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time
100 ––– ––– ––– 53 79 ––– 17 26 ––– 24 35 ––– 50 75 ––– 18 ––– ––– 140 ––– ––– 38 –––
S VDS = 10V, ID = 72A ID = 72A
nC VDS = 16V VGS = 4.5V VGS = 0V, VDS = 10V VDD = 10V
ns ID = 72A RG = 3.9Ω
tf Ciss Coss Crss
Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
––– 36 –––
VGS = 4.5V
––– 5090 –––
VGS = 0V
––– 3440 ––– pF VDS = 10V
––– 560 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter Single Pulse Avalanche Energy Avalanche Current
Typ. ––– –––
Max. 640 72
Units mJ A
Diode Characteristics
Symbol IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time Qrr Reverse Recovery Charge
trr Reverse Recovery Time Qrr Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
––– ––– 180
A
––– ––– 720
MOSFET symbol showing the integral reverse p-n junction diode.
G
D S
––– 0.93 1.3 V TJ = 25°C, IS = 72A, VGS = 0V
––– 0.80 –––
TJ = 125°C, IS = 72A, VGS = 0V
––– 180 280 ns TJ = 25°C, IF = 72A, VR=20V ––– 87 130 nC di/dt = 100A/µs
––– 190 280 ––– 85 130
ns TJ = 125°C, IF = 72A, VR=20V nC di/dt = 100A/µs
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ID, Drain-to-Source Current (A)
IRL3716/3716S/3716LPbF
10000 1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
10
1 0.1
2.5V
20µs PULSE WIDTH Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
10000 1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
2.5V
10
1 0.1
20µs PULSE WIDTH Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
1000.00 100.00
TJ = 25°C
TJ = 175°C
10.00 2.0
VDS = 15V 20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 I D = 180A
1.5
1.0
0.5
V GS = 10V 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRL3716/3716S/3716LPbF
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
100000 10000 1000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Ciss Coss
Crss
16 ID = 72A 12
8 4
VDS = 16V
100 1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
0 0 30 60 90 120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
150
ISD, Reverse Drain Current (A)
1000 TJ = 175 ° C
100
10000 1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
10 TJ.