Document
Applications
l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
PD- 95146
IRFB4710PbF IRFS4710PbF IRFSL4710PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.014Ω
ID
75A
TO-220AB IRFB4710
D2Pak IRFS4710
TO-262 IRFSL4710
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max. 75 53 300 3.8 200 1.4 ± 20 8.2
-55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W
W/°C V
V/ns
°C
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient
Notes through are on page 11
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Typ. ––– 0.50 ––– –––
Max. 0.74 ––– 62 40
Units °C/W
1
04/22/04
IRFB/IRFS/IRFL4710PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
100 ––– –––
3.5 ––– ––– ––– –––
––– ––– V
0.11 ––– V/°C
0.011 0.014 Ω
––– 5.5 V
––– 1.0 ––– 250
µA
––– 100 ––– -100
nA
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 45A VDS = VGS, ID = 250µA VDS = 95V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
35 ––– –––
Qg Total Gate Charge
––– 110 170
Qgs Gate-to-Source Charge
––– 43 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 40 –––
td(on)
Turn-On Delay Time
––– 35 –––
tr Rise Time
––– 130 –––
td(off)
Turn-Off Delay Time
––– 41 –––
tf Fall Time
––– 38 –––
Ciss Input Capacitance
––– 6160 –––
Coss Output Capacitance
––– 440 –––
Crss Reverse Transfer Capacitance
––– 250 –––
Coss Output Capacitance
––– 1580 –––
Coss Output Capacitance
––– 280 –––
Coss eff.
Effective Output Capacitance
––– 430 –––
Units S nC
ns
pF
Conditions
VDS = 50V, ID = 45A ID = 45A VDS = 50V VGS = 10V, VDD = 50V ID = 45A RG = 4.5Ω VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 190 45 20
Units mJ A mJ
Diode Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 75 ––– ––– 300
MOSFET symbol A showing the
integral reverse p-n junction diode.
G
D S
––– ––– 1.3 V TJ = 25°C, IS = 45A, VGS = 0V ––– 74 110 ns TJ = 25°C, IF = 45A ––– 180 260 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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I D, Drain-to-Source Current (A)
IRFB/IRFS/IRFL4710PbF
1000 TOP 100
VGS 15V 12V 10V 8.0V 7.5V 7.0V
6.5V
BOTTOM 6.0V
10
1
0.1 0.01
0.1
6.0V
20µs PULSE WIDTH TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1000 TOP
VGS 15V 12V 10V 8.0V 7.5V 7.0V
6.5V
BOTTOM 6.0V
100
10 6.0V
20µs PULSE WIDTH
1 TJ = 175 °C 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
I D, Drain-to-Source Current (A)
1000
TJ = 175° C
100
10
TJ = 25°C
1
0.1 6.0
V DS= 50V 20µs PULSE WIDTH
7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics www.irf.com
RDS(on) , Drain-to-Source On Resistance (Normalized)
3.0 ID = 75A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance Vs. Temperature
3
C, Capacitance(pF)
IRFB/IRFS/IRFL4710PbF
10000 8000 6000
Ciss
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd
4000
2000
0 1
Coss Crss
10 VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
VGS , Gate-to-Source Voltage (V)
20 ID = 45A
16 12
VDS = 80V
VDS = 50V VDS = 20V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13 0 40 80 120 160 200 QG , Total Gate Charge (nC)
Fig.