AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET
PD - 96905B
IRF1405ZS-7P IRF1405ZL-7P
Features l Advanced Process Technology l Ultra Low On-Resistan...
Description
AUTOMOTIVE MOSFET
PD - 96905B
IRF1405ZS-7P IRF1405ZL-7P
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET D VDSS = 55V
G RDS(on) = 4.9mΩ
S
S (Pin 2, 3, 5, 6, 7) G (Pin 1)
ID = 120A
D2Pak 7 Pin
TO-263CA 7 Pin
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS EAS EAS (tested) IAR EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited) hSingle Pulse Avalanche Energy Tested Value cAvalanche Current gRepetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
T...
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