IRL3714ZL

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 16m: 4.8nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3714Z D2Pak IRL3714ZS TO-262 IRL3714ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.irf.com Max. 20 ± 20 36g 25g 140 35 18 0.23 -55 to + 175 300 (1.6mm from case) Typ. ––– 0.50 ––– ––– Max. 4.3 ––– 62 40 Units V A W W/°C °C Units °C/W 1 10/8/03 IRL3714Z/ZS/ZL Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Curre...