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IRL3714ZS Dataheets PDF



Part Number IRL3714ZS
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRL3714ZS DatasheetIRL3714ZS Datasheet (PDF)

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 16m: 4.8nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3714Z D2Pak IRL3714ZS TO-262 IRL3714ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Sour.

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 20V 16m: 4.8nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3714Z D2Pak IRL3714ZS TO-262 IRL3714ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.irf.com Max. 20 ± 20 36g 25g 140 35 18 0.23 -55 to + 175 300 (1.6mm from case) Typ. ––– 0.50 ––– ––– Max. 4.3 ––– 62 40 Units V A W W/°C °C Units °C/W 1 10/8/03 IRL3714Z/ZS/ZL Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 20 ––– ––– ––– 1.65 ––– ––– ––– 0.015 13 21 2.1 -5.2 ––– ––– ––– 16 26 2.55 ––– 1.0 V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 15A eVGS = 4.5V, ID = 12A V VDS = VGS, ID = 250µA mV/°C µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 21 ––– ––– ––– 4.8 7.2 S VDS = 10V, ID = 14A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– 1.7 ––– ––– 0.80 ––– ––– 1.7 ––– ––– 0.60 ––– VDS = 10V nC VGS = 4.5V ID = 14A See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 2.5 ––– Qoss td(on) tr td(off) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ––– 2.7 ––– nC VDS = 10V, VGS = 0V ––– 6.0 ––– eVDD = 10V, VGS = 4.5V ––– 13 ––– ID = 14A ––– 10 ––– ns Clamped Inductive Load tf Fall Time ––– 5.0 ––– Ciss Input Capacitance ––– 550 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 99 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ÙIAR Avalanche Current ™EAR Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 23 14 3.5 Units mJ A mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions gIS Continuous Source Current ––– ––– 36 MOSFET symbol D (Body Diode) ISM Pulsed Source Current Ù(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– 140 A showing the integral reverse G ––– ––– 1.0 ––– 8.3 12 ––– 1.5 2.3 p-n junction diode. S eV TJ = 25°C, IS = 14A, VGS = 0V ens TJ = 25°C, IF = 14A, VDD = 10V nC di/dt = 100A/µs 2 www.irf.com ID, Drain-to-Source Current (A) 1000 100 TOP BOTTOM VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V IRL3714Z/ZS/ZL 1000 100 TOP BOTTOM VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V ID, Drain-to-Source Current (A) 10 1 0.1 3.0V 30µs PULSE WIDTH Tj = 25°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 1. Typical Output Characteristics 10 3.0V 1 0.1 30µs PULSE WIDTH Tj = 175°C 1 VDS, Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (Α) 1000 100 TJ = 25°C TJ = 175°C 10 VDS = 10V 30µs PULSE WIDTH 1.0 2 3 4 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 36A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRL3714Z/ZS/ZL 10000 1000 100 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss Crss C, Capacitance(pF) 10 1 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 VGS, Gate-to-Source Voltage (V) 6.0 ID= 14A 5.0 4.0 VDS= 16V VDS= 10V 3.0 2.0 1.0 0.0 0 123456 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 7 ISD, Reverse Drain Current (A) 1000.00 100.00 10.00 TJ = 175°C 1.00 0.0 TJ = 25°C VGS = 0V 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) 2.5 Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID, Drain-to-Source Current (A) 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100µsec Tc = 25°C Tj = 175°C Single Pu.


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