IXTH02N250

High Voltage Power MOSFETs IXTH02N250 IXTV02N250S N-Channel Enhancement Mode Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 Maximum Ratings 2500 2500 V V ±20 V ±30 V 200 mA 600 mA 83 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 1.13 / 10 11..65 / 25..14.6 °C °C Nm/lb.in N/lb. 6g 4g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.5 4.5 V ±100 nA 5 μA 500 μA 450 Ω G DS D (Tab) PLUS220SMD (IXTV_S) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100187E(04/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5 ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) t...