AON6702
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AON6702 uses advanced trench technology with a monoli...
AON6702
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AON6702 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
30V 85A < 2mΩ < 3mΩ
100% UIS Tested 100% Rg Tested
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
D
SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 85 67 260 26 20 72 259 83 33 2.3 1.4
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14 40 1
Max 18 55 1.5
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev 2: November 2010
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AON6702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Unit...