TPCM8004-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
TPCM8004-H
High-Efficiency DC-DC Conv...
TPCM8004-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOS V-H)
TPCM8004-H
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1
Unit: mm
0.8 8
0.25±0.05 0.05 M A
5
4.65±0.3 3.65±0.2
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.75±0.05
0.2+-00.2
0.166±0.05
14 3.5±0.2
0.55 A
0.05 S
S1
4
1.05±0.2
0.6±0.1
2.2±0.2
Absolute Maximum Ratings (Ta = 25°C)
2.75±0.2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s) (Note 2a)
Drain power dissipation
(t = 10 s) (Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD
PD
PD
EAS
IAR
EAR
Tch Tstg
Rating 30 30 ±20 24 72 30 2.3
1.0
75
24 3.0
150 −55 to 150
Unit V V V A W W
W
mJ A mJ °C °C
0.8±0.1 85
1, 2, 3: SOURCE 5, 6, 7, 8: DRAIN
4: GATE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-4L1A
Weight: 0.028 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes ...