Document
Data Sheet
4V Drive Nch MOSFET
RP1E125XN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RP1E125XN
Taping TR 1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 12.5
IDP *1
36
IS 1.6
ISP *1
36
PD *2
2.0
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit V V A A A A W C C
Inner circuit
(6) (5) (4)
(1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain
∗2
∗1
(1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Thermal resistance Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)* 62.5
Unit C / W
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2011.04 - Rev.A
RP1E125XN
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage
IGSS V(BR)DSS
IDSS VGS (th)
Static drain-source on-state resistance
RDS
*
(on)
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
l Yfs l* Ciss Coss Crss td(on)*
tr * td(off)*
tf * Qg * Qgs * Qgd *
Min. 30 -
1.0 -
9.0 -
Typ. -
7.5 9.5 10.0
1000 340 170
12 20 55 18 12.7 2.6 6.0
Max. 10
1 2.5 12.0 13.3 14.0 -
Unit Conditions
A VGS=20V, VDS=0V V ID=1mA, VGS=0V A VDS=30V, VGS=0V V VDS=10V, ID=1mA
ID=12.5A, VGS=10V m ID=12.5A, VGS=4.5V
ID=12.5A, VGS=4.0V S ID=12.5A, VDS=10V pF VDS=10V pF VGS=0V pF f=1MHz
ns ID=6.3A, VDD 15V ns VGS=10V ns RL=2.38 ns RG=10 nC ID=12.5A, VDD 15V nC VGS=5V nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Forward Voltage
Symbol VSD *
Min. -
Typ. -
*Pulsed
Max. Unit
Conditions
1.2 V Is=12.5A, VGS=0V
Data Sheet
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2011.04 - Rev.A
RP1E125XN
Electrical characteristic curves (Ta=25C)
12.5 10 7.5
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=3.0V
VGS=10.0V VGS=4.5V VGS=4.0V
Ta=25°C Pulsed
Drain Current : ID [A]
5
VGS=2.5V 2.5
0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
100 Ta=25°C Pulsed
VGS=4.0V VGS=4.5V VGS=10V 10
Drain Current : ID [A]
Data Sheet
12.5 10 7.5
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V VGS=4.5V VGS=4.0V
VGS=3.0V
VGS=2.5V
5
2.5
0 0
Ta=25°C Pulsed
2468 Drain-Source Voltage : VDS [V]
10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
100 VGS=10V pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
10
Static Drain-Source On-State Resistance RDS(on) [mΩ]
Static Drain-Source On-State Resistance RDS(on) [mΩ]
1 0.01
0.1 1 10 Drain Current : ID [A]
100
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
100 VGS=4.5V pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
10
1 0.01
0.1 1 10 Drain Current : ID [A]
100
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
100 VGS=4V pulsed
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
10
Static Drain-Source On-State Resistance RDS(on) [mΩ]
Static Drain-Source On-State Resistance RDS(on) [mΩ]
1 0.01
0.1 1 10 Drain Current : ID [A]
100
1 0.01
0.1 1 10 Drain Current : ID [A]
100
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2011.04 - Rev.A
RP1E125XN
Data Sheet
Forward Transfer Admittance Yfs [S]
Source Current : Is [A]
Fig.7 Forward Transfer Admittance vs. Drain Current
100 VDS=10V pulsed
10
1
Ta=125°C 0.1 Ta=75°C
Ta=25°C Ta=-25°C
0.01 0.001
0.01
0.1 1 Drain Current : ID [A]
10
100
Fig.9 Source Current vs. Source-Drain Voltage 100
VGS=0V pulsed
10
Ta=125°C 1 Ta=75°C
Ta=25°C Ta=-25°C
0.1
0.01 0.0
10000 1000 100
0.5 1.0 1.5 Source-Drain Voltage : VSD [V]
2.0
Fig.11 Switching Characteristics
tf td(off)
VDD≒15V VGS=10V RG=10Ω Ta=25°C
Pulsed
10
1 0.01
td(on)
tr
0.1 1 10 Drain Current : ID [A]
100
Gate-Source Voltage : VGS [V]
Static Drain-Source On-State Resistance RDS(on) [mΩ]
Drain Currnt : ID [A]
Fig.8 Typical Transfer Characteristics
100 VDS=10V pulsed
10
Ta=125°C 1 Ta=75°C
Ta=25°C Ta=-25°C
0.1
0.01
0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
50 Ta=25°C pulsed
40
30
ID=6.3A ID=12.5A
20
10
0 0
2468 Gate-Source Voltage : VGS [V]
10
Fig.12 Dynamic Input Characteristics
10 Ta=25°C VDD=15V ID=12.5A
8 Pulsed
6
4
2
0 0 5 10 15 20 25
Total Gate Charge : Qg [n.