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RP1E125XN Dataheets PDF



Part Number RP1E125XN
Manufacturers Rohm
Logo Rohm
Description N-Channel MOSFET
Datasheet RP1E125XN DatasheetRP1E125XN Datasheet (PDF)

Data Sheet 4V Drive Nch MOSFET RP1E125XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E125XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current.

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Data Sheet 4V Drive Nch MOSFET RP1E125XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E125XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 30 VGSS 20 ID 12.5 IDP *1 36 IS 1.6 ISP *1 36 PD *2 2.0 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Limits Rth (ch-a)* 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RP1E125XN  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 - 1.0 - 9.0 -   Typ. - 7.5 9.5 10.0 1000 340 170 12 20 55 18 12.7 2.6 6.0 Max. 10 1 2.5 12.0 13.3 14.0 - Unit Conditions A VGS=20V, VDS=0V V ID=1mA, VGS=0V A VDS=30V, VGS=0V V VDS=10V, ID=1mA ID=12.5A, VGS=10V m ID=12.5A, VGS=4.5V ID=12.5A, VGS=4.0V S ID=12.5A, VDS=10V pF VDS=10V pF VGS=0V pF f=1MHz ns ID=6.3A, VDD 15V ns VGS=10V ns RL=2.38 ns RG=10 nC ID=12.5A, VDD 15V nC VGS=5V nC Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. - Typ. - *Pulsed Max. Unit Conditions 1.2 V Is=12.5A, VGS=0V Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RP1E125XN Electrical characteristic curves (Ta=25C) 12.5 10 7.5 Fig.1 Typical Output Characteristics (Ⅰ) VGS=3.0V VGS=10.0V VGS=4.5V VGS=4.0V Ta=25°C Pulsed   Drain Current : ID [A] 5 VGS=2.5V 2.5 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C Pulsed VGS=4.0V VGS=4.5V VGS=10V 10 Drain Current : ID [A] Data Sheet 12.5 10 7.5 Fig.2 Typical Output Characteristics (Ⅱ) VGS=10.0V VGS=4.5V VGS=4.0V VGS=3.0V VGS=2.5V 5 2.5 0 0 Ta=25°C Pulsed 2468 Drain-Source Voltage : VDS [V] 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 0.01 0.1 1 10 Drain Current : ID [A] 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 0.1 1 10 Drain Current : ID [A] 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 0.01 0.1 1 10 Drain Current : ID [A] 100 1 0.01 0.1 1 10 Drain Current : ID [A] 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RP1E125XN   Data Sheet Forward Transfer Admittance Yfs [S] Source Current : Is [A] Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0.001 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed 10 Ta=125°C 1 Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.0 10000 1000 100 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 2.0 Fig.11 Switching Characteristics tf td(off) VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed 10 1 0.01 td(on) tr 0.1 1 10 Drain Current : ID [A] 100 Gate-Source Voltage : VGS [V] Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain Currnt : ID [A] Fig.8 Typical Transfer Characteristics 100 VDS=10V pulsed 10 Ta=125°C 1 Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C pulsed 40 30 ID=6.3A ID=12.5A 20 10 0 0 2468 Gate-Source Voltage : VGS [V] 10 Fig.12 Dynamic Input Characteristics 10 Ta=25°C VDD=15V ID=12.5A 8 Pulsed 6 4 2 0 0 5 10 15 20 25 Total Gate Charge : Qg [n.


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