RP1E070XN

Data Sheet 4V Drive Nch MOSFET RP1E070XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E070XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 30 VGSS 20 ID 7 IDP *1 18 IS 1.6 ISP *1 18 PD *2 2.0 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Limits Rth (ch-a)* 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.02 - Rev.A RP1E070XN  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacit...