Document
AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
350V@150℃ 11.5A <0.42Ω
Top View
TO252 DPAK
Bottom View
D D
Top View
TO251A IPAK
Bottom View
S G
G S
S D G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM IAR EAR EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
G D S
Maximum 300 ±30 11.5 8.3 29 3.8 216 430 5 150 1
-50 to 175
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 45
0.7
Maximum 55
0.5 1
D
G S
Units V V
A
A mJ mJ V/ns W W/ oC °C °C
Units °C/W °C/W °C/W
Rev0: Dec 2010
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AOD468/AOI468
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
BVDSS /∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=300V, VGS=0V VDS=240V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6A
gFS Forward Transconductance
VDS=40V, ID=6A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
300 350
V
0.29
V/ oC
1 10 µA
±100 nΑ
3.4 4 4.5 V
0.31 0.42 Ω
11 S
0.74 1
V
12 A
29 A
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
500 632 790 55 90 125 3 7 11 1.3 2.7 4.1
pF pF pF
Ω
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=240V, ID=12A
VGS=10V, VDS=150V, ID=12A, RG=25Ω
IF.