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AOD468 Dataheets PDF



Part Number AOD468
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 11.5A N-Channel MOSFET
Datasheet AOD468 DatasheetAOD468 Datasheet (PDF)

AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rect.

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AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 350V@150℃ 11.5A <0.42Ω Top View TO252 DPAK Bottom View D D Top View TO251A IPAK Bottom View S G G S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H ID IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL G D S Maximum 300 ±30 11.5 8.3 29 3.8 216 430 5 150 1 -50 to 175 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 0.7 Maximum 55 0.5 1 D G S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev0: Dec 2010 www.aosmd.com Page 1 of 6 AOD468/AOI468 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=300V, VGS=0V VDS=240V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 300 350 V 0.29 V/ oC 1 10 µA ±100 nΑ 3.4 4 4.5 V 0.31 0.42 Ω 11 S 0.74 1 V 12 A 29 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 500 632 790 55 90 125 3 7 11 1.3 2.7 4.1 pF pF pF Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, VDS=240V, ID=12A VGS=10V, VDS=150V, ID=12A, RG=25Ω IF.


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