RP1L080SN

Data Sheet 4V Drive Nch MOSFET RP1L080SN Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3) Packaging specifications Package Type Code Basic ordering unit (pieces) RP1L080SN Taping TR 1000  Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 60 20 8.0 32 1.6 32 2.0 150 55to150 *1 Pw≤10s, Duty cycle≤1% *2 Mounted on a ceramic board Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A RP1L080SN Electrical characteristics (Ta = 25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitan...