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MBRP30045CT

ON Semiconductor

POWERTAP II Switch-mode Power Rectifier

MBRP30045CT POWERTAP II Switch-mode Power Rectifier These state−of−the−art devices use the Schottky Barrier principle w...


ON Semiconductor

MBRP30045CT

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Description
MBRP30045CT POWERTAP II Switch-mode Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features Dual Diode Construction − May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Pb−Free Package is Available* Mechanical Characteristics: Case: Epoxy, Molded with metal heatsink base Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25−40 lb−in max Base Plate Torques: See procedure given in the Package Outline Section MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 140°C) Per Leg Per Device IF(AV) 150 300 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 140°C) Per Leg IFRM 300 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Leg IFSM 2500 A Peak Repetitive Reverse Current IRRM (2.0 ms, 1.0 kHz) Per Leg 2.0 A Storage Temperature Range Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device f...




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