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IRF830

ON Semiconductor
Part Number IRF830
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Jan 12, 2016
Detailed Description IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for h...
Datasheet PDF File IRF830 PDF File

IRF830
IRF830

Overview
IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds • Low RDS(on) to Minimize On−Losses, Specified at Elevated Temperature • Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use with Inductive Loads MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage Drain Current Continuous, TC = 25°C Continuous, TC = 100°C Peak, TC = 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operat...


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