N-Channel Silicon MOSFET
Ordering number : ENN7746
MCH3427
MCH3427
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive.
N-...
Description
Ordering number : ENN7746
MCH3427
MCH3427
Features
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)
Ratings 20
±12 4
16 1
150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : ZC
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2 RDS(on)3
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min 20
0.4 2.9
Ratings typ
max
Unit
V
1 µA
±10 µA
1.3 V
4.9 S
40 52 mΩ
54 76 mΩ
72 110 mΩ
400 pF
92 pF
85 pF
11 ns
75 ns
54 ...
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