EPC1001

DATASHEET EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A EPC1001 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings VDS Drain-to-Source Voltage ID Continuous (TA = 25˚C,θJA = 20) Pulsed (25˚C, Tpulse = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 100 25 100 6 -5 -40 to 125 -40 to 150 V A V ˚C PARAMETER Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(th) RDS(ON) Gate Threshold Voltage Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 300 µA VDS = 80 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 5 mA VGS = 5 V, ID = 25 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate to...