SCH2830

Ordering number : ENA0861 SCH2830 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. [SBD] Short reverse recovery time. Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Symbol VDSS VGSS ID IDP PD Tch Tstg VRRM VRSM Average Output Current IO Marking : XF Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Mounted in Cu-foiled area of 0.72mm2✕0.03mm on glass epoxy board Ratings Unit --20 ±10 --1 --4 0.6 150 --55 to +125 V V A A W °C °C 30 V 30 V 0.7 A 0.5 A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be i...