Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9...
Power
Transistors
2SC4953
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
High-speed switching
φ 3.2±0.1
15.0±0.5
High collector-base voltage (Emitter open) VCBO
Wide safe operation area
Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV
1.4±0.2 1.6±0.2
2.6±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
0.8±0.1
0.55±0.15
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
500
13.7±0.2 4.2±0.2
Solder Dip
V
c e. d ty Collector-emitter voltage (E-B short) VCES
500
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
400
V
a e cle con Emitter-base voltage (Collector open) VEBO
7
V
lifecy , dis Base current
IB
1.2
A
n u duct typed Collector current
IC
3
A
te tin Pro ed Peak collector current
ICP
6
A
ur tinu Collector power
TC = 25°C PC
30
W
ing fo iscon dissipation
2.0
in n llow d d Junction temperature
s fo lane Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
2.54±0.30 5.08±0.50
123
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
a coed inclucdeetype, p ■ Electrical Characteristics Ta = 25°C ± 3°C
tinu nan Parameter
Symbol
Conditions
M is iscon ainte Collector-emitter voltage (Base open)
e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Emitter-base cutoff current (Collector open)
inten nce Forward current tr...
