NTP4804NG

NTP4804N Power MOSFET 30 V, 133 A, Single N−Channel, TO−220 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* Applications AC–DC Converters DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain (CNuortreen1t)RqJA Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC Steady State Power Dissipation RqJC TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C VDSS VGS ID PD ID PD 30 V ±20 V 21 A 13 3.0 W 133 A 85 120 W Pulsed Drain Current Current Limited by Package TA = 25°C, tp = 10 ms TA = 25°C IDM IDmaxPkg 350 45 A A Operating Junction and Storage Temperature TJ, TSTG −55 to +175 °C Source Current (Body Diode) Drain to Source DV/DT IS dV/dt 78 A 6 V/ns Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 24 V, VGS = 10 V, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS TL 474 mJ 260 °C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 4.0 mW @ 10 V 5.5 mW @ 4.5 V ID MAX 133 A N−Channel D G 4 S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 12...