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NCE8290 Dataheets PDF



Part Number NCE8290
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE8290 DatasheetNCE8290 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good s.

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http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE8290 NCE8290 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Limit 82 ±20 90 63 320 170 Unit V V A A A W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE8290 Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG 1.13 550 -55 To 175 W/℃ mJ ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc 0.88 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=75V,VGS=0V VGS=±20V,VDS=0V 82 85 - -- 1 - - ±100 V μA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=10V, ID=40A VDS=10V,ID=40A 2 2.9 4 - 7.5 8.5 - 50 - V mΩ S Gate resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Rg VDS=0V,VGS=0V,F=1.0MHz - 0.63 - Clss Coss VDS=15V,VGS=0V, F=1.0MHz - 4871 - 630.6 - Crss - 410.3 - Ω PF PF PF Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr td(off) tf Qg Qgs Qgd VDD=30V,ID=42A VGS=10V,RGEN=10Ω VDS=48V,ID=84A, VGS=10V - 36.1 - 54.3 - 85.2 - 37.3 - 85.7 - 23.2 - 31.2 - nS nS nS nS nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=20A - - 1.2 V IS - - - 90 A trr TJ = 25°C, IF =84A - 88.3 - nS Qrr di/dt = 100A/μs(Note3) - 65.9 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 http://www.ncepower.com Test circuit 1)EAS test Circuits Pb Free Product NCE8290 2)Gate charge test Circuit: 3)Switch Time Test Circuit: Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 http://www.ncepower.com Typical Electrical and Thermal Characteristics (Curves) Pb Free Product NCE8290 Normalized On-Resistance ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 Rdson On-Resistance(mΩ) C Capacitance (nF) http://www.ncepower.com Pb Free Product NCE8290 Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Power Dissipation (w) Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 Power De-rating ID- Drain Current (A) r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 http://www.ncepower.com TO-220-3L Package Information Pb Free Product NCE8290 Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V Φ Dimensions In Millimeters Min. 4.400 Ma.


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