Document
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Pb Free Product
NCE8290
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V
(Typ:7.5mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply
Schematic diagram Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE8290
NCE8290
TO-220-3L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Limit
82 ±20 90 63 320 170
Unit
V V A A A W
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE8290
Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
1.13 550 -55 To 175
W/℃ mJ ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 0.88 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3)
BVDSS IDSS IGSS
VGS=0V ID=250μA VDS=75V,VGS=0V VGS=±20V,VDS=0V
82 85
-
--
1
- - ±100
V μA nA
Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4)
VGS(th) RDS(ON)
gFS
VDS=VGS,ID=250μA VGS=10V, ID=40A VDS=10V,ID=40A
2 2.9
4
- 7.5 8.5
- 50
-
V mΩ S
Gate resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4)
Rg VDS=0V,VGS=0V,F=1.0MHz - 0.63 -
Clss Coss
VDS=15V,VGS=0V, F=1.0MHz
- 4871 - 630.6
-
Crss
- 410.3
-
Ω PF PF PF
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD=30V,ID=42A VGS=10V,RGEN=10Ω
VDS=48V,ID=84A, VGS=10V
- 36.1 - 54.3 - 85.2 - 37.3 - 85.7 - 23.2 - 31.2
-
nS nS nS nS nC nC nC
Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=20A
- - 1.2
V
IS
-
- - 90
A
trr
TJ = 25°C, IF =84A
- 88.3
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 65.9
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE8290
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
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NCE8290
Normalized On-Resistance
ID- Drain Current (A)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Rdson On-Resistance(mΩ)
C Capacitance (nF)
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Pb Free Product
NCE8290
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Power Dissipation (w)
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Power De-rating
ID- Drain Current (A)
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com TO-220-3L Package Information
Pb Free Product
NCE8290
Symbol
A A1 b b1 c c1 D E E1 e e1 F H h L L1 V Φ
Dimensions In Millimeters
Min. 4.400
Ma.