MSC3130T1

MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Symbol PD TJ Tstg Value 15 10 3.0 50 Max 200 150 −55 ~ +150 Unit Vdc Vdc Vdc mAdc Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Collector Cutoff Current (VCB = 10 Vdc, IE = 0) ICBO — Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) VCEO 10 Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) VEBO 3.0 DC Current Gain (Note 1) (VCE = 4.0 Vdc, IC = 5.0 mAdc) hFE 75 Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 4.0 mAdc) VCE(sat) − Current−Gain − Bandwidth Product (VCB = 4.0 Vdc, IE = −5.0 mAdc) fT 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. v 2%. 1.4 Max 1.0 − − 400 0.5 2.5 Unit mAdc Vdc Vdc − Vdc GHz http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 2 1 3 SC−59 SUFFIX CASE 318D MARKING DIAGRAM 1S M 1S = Specific Device Code M = Date Code Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 4 1 Publication Order Number: MSC3130T1/D MSC3130T1 INFORMATION FOR USING THE SC−59 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount b...