MMSF1310

MMSF1310 Preferred Device Power MOSFET 10 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Low RDS(on) Provides Higher Efficiency and Extends Battery Life High Speed Switching Provides High Efficiency for DC/DC Converter Miniature SO−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed, With Soft Recovery MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Max Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous Continuous Drain Current @ TA = 25°C (Note 1.) Pulsed Drain Current (Note 2.) Total Power Dissipation @ TA = 25°C (Note 1.) VDSS VDGR VGS ID IDM PD 30 30 ± 20 10 50 2.5 Operati...