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LQA10N200C Dataheets PDF



Part Number LQA10N200C
Manufacturers Power Integrations
Logo Power Integrations
Description 200V 10A Common-Cathode Diode
Datasheet LQA10N200C DatasheetLQA10N200C Datasheet (PDF)

LQA10T200C, LQA10N200C Qspeed™ Family 200 V, 10 A Common-Cathode Diode Product Summary IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 200 32.4 2.6 0.39 A V nC A General Description This device has the lowest QRR of any 200 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications Pin Assignment  AC/DC and DC/DC output rectification  Output and freewheeling diodes  Motor drive cir.

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LQA10T200C, LQA10N200C Qspeed™ Family 200 V, 10 A Common-Cathode Diode Product Summary IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 200 32.4 2.6 0.39 A V nC A General Description This device has the lowest QRR of any 200 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications Pin Assignment  AC/DC and DC/DC output rectification  Output and freewheeling diodes  Motor drive circuits  DC-AC inverters Features TO-220AB LQA10T200C A1 A2 TO-252 DPAK LQA10N200C K RoHS Compliant Package uses Lead-free plating and “Green” mold compound Halogen free per IEC 61249-2-21.  Low QRR, Low IRRM, Low tRR  High dIF/dt capable (1000A/s)  Soft recovery Benefits  Increases efficiency  Eliminates need for snubber circuits  Reduces EMI filter component size and count  Enables extremely fast switching Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol VRRM IF(AVG) Parameter Peak repetitive reverse voltage Average forward current IFSM IFSM TJ TSTG PD Non-repetitive peak surge current Non-repetitive peak surge current Operating junction temperature range Storage temperature Lead soldering temperature Power dissipation Conditions TJ = 25 °C Per Diode, TJ = 150 °C, TC = 130 °C Per Device, TJ = 150 °C, TC = 130 °C Per Diode, 60 Hz, ½ cycle Per Diode, ½ cycle of t = 28 s Sinusoid, TC = 25 °C Leads at 1.6mm from case, 10 sec TC = 25 °C Rating 200 5 10 60 Units V A A A 350 A –55 to 150 –55 to 150 300 27.7 °C °C °C W Thermal Resistance Symbol RJA RJC Resistance from: Junction to ambient Junction to case Conditions TO-220AB (only) Per Diode Per Device Rating 62 4.5 2.3 Units °C/W °C/W °C/W www.powerint.com April 2013 LQA10T200C, LQA10N200C Electrical Specifications at TJ = 25 C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max DC Characteristics per diode IR Reverse current per diode VR = 200 V, TJ = 25 °C VR = 200 V, TJ = 125 °C VF Forward voltage per diode IF = 5 A, TJ = 25 °C IF = 5 A, TJ = 150 °C CJ Junction capacitance per VR = 10 V, 1 MHz diode Dynamic Characteristics per diode - - 250 - 0.23 - 0.95 1.1 - 0.8 - 22 - tRR Reverse recovery time, dIF/dt = 200 A/s TJ = 25 °C - 13.9 - per diode VR= 130 V, TJ = 125 °C - 19.5 - IF= 5 A QRR Reverse recovery charge, dIF/dt = 200 A/s TJ = 25 °C - 15.6 25.5 per diode VR= 130 V, TJ = 125 °C - 32.4 - IF= 5 A IRRM Maximum reverse dIF/dt = 200 A/s TJ = 25 °C - 1.78 2.65 recovery current, per diode VR= 130 V, IF= 5 A TJ = 125 °C - 2.6 - S Softness per diode = tb ta dIF/dt = 200 A/s VR= 130 V, IF= 5 A TJ = 25 °C TJ = 125 °C - 0.44 0.39 - Units A mA V V pF ns ns nC nC A A Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) IF 0 dIF/dt tRR ta tb IRRM 0.1xIRRM Pulse generator VR L1 15V + Rg Q1 D1 DUT www.powerint.com 2 Rev. 1.0 04/13 LQA10T200C, LQA10N200C Electrical Specifications at TJ = 25 C (unless otherwise specified) IF (A) 10 9 8 Tj=125C 7 6 5 4 Tj=25C 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) IF (A) 1.0 0.9 0.8 0.7 Tj=125C 0.6 0.5 0.4 0.3 0.2 0.1 Tj=25C 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF (V) Cj (pF) 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 VR (V) IF(AV) (A) 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 Case Temperature, TC (oC) 125 150 70 60 dIF/dt=500A/us 50 40 30 dIF/dt=200A/us 20 10 0 0 2 4 6 8 10 IF (A) tRR (ns) 30 25 dIF/dt=200A/us 20 15 dIF/dt=500A/us 10 5 0 0 2 4 6 8 10 IF (A) QRR (nC) 3 Rev. 1.0 04/13 www.powerint.com P (W) IF(PEAK) (A) LQA10T200C, LQA10N200C 30 25 20 15 10 5 0 25 50 75 100 Case Temperature, TC (oC) 125 150 20 18 duty cycle=10% 16 duty cycle=30% 14 duty cycle=50% 12 DC 10 8 6 4 2 0 25 50 75 100 125 150 TC(°C) Zth(j-c)/Rth(j-c) 1 D= 0.5 D = 0.3 D= 0.1 0.1 D= 0.05 D= 0.02 0.01 D= 0.01 D=0.005 D=0.002 Single Pulse 0.001 1.E-06 1.E-05 LQA10x200C 1.E-04 1.E-03 t1(sec) 1.E-02 1.E-01 1.E+00 www.powerint.com 4 Rev. 1.0 04/13 LQA10T200C, LQA10N200C Dimensional Outline Drawings TO-220AB Q D D1 E øP A A1 b2 b e e1 L1 L c A2 Millimeters Dim MIN MAX A 4.32 4.70 A1 1.11 1.38 A2 2.59 2.79 b 0.77 1.00 b2 1.23 1.36 C 0.34 0.47 D 14.71 15.75 D1 9.05 9.25 E 9.96 10.36 e 2.44 2.64 e1 4.98 5.18 L 12.70 14.22 L1 – 3.90 ØP 3.71 3.96 Q 2.54 2.90 Mechanical Mounting Method Screw through hole in package tab Clamp against package body Maximum Torque / Pressure specification 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2 TO-252 DPAK Millim.


LQA10T200C LQA10N200C MAX15004A


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