Document
LQA10T200C, LQA10N200C Qspeed™ Family
200 V, 10 A Common-Cathode Diode
Product Summary
IF(AVG) per diode VRRM
QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C)
10 200 32.4 2.6 0.39
A V nC A
General Description
This device has the lowest QRR of any 200 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.
Applications
Pin Assignment
AC/DC and DC/DC output rectification Output and freewheeling diodes
Motor drive circuits DC-AC inverters
Features
TO-220AB
LQA10T200C A1
A2
TO-252 DPAK
LQA10N200C
K
RoHS Compliant
Package uses Lead-free plating and “Green” mold compound Halogen free per IEC 61249-2-21.
Low QRR, Low IRRM, Low tRR High dIF/dt capable (1000A/s) Soft recovery
Benefits
Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size and count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Symbol
VRRM IF(AVG)
Parameter Peak repetitive reverse voltage Average forward current
IFSM IFSM TJ TSTG
PD
Non-repetitive peak surge current
Non-repetitive peak surge current
Operating junction temperature range Storage temperature Lead soldering temperature Power dissipation
Conditions TJ = 25 °C Per Diode, TJ = 150 °C, TC = 130 °C Per Device, TJ = 150 °C, TC = 130 °C Per Diode, 60 Hz, ½ cycle Per Diode, ½ cycle of t = 28 s Sinusoid, TC = 25 °C
Leads at 1.6mm from case, 10 sec TC = 25 °C
Rating
200 5 10 60
Units
V A A A
350 A
–55 to 150 –55 to 150
300 27.7
°C °C °C W
Thermal Resistance
Symbol RJA
RJC
Resistance from: Junction to ambient
Junction to case
Conditions
TO-220AB (only) Per Diode Per Device
Rating
62 4.5 2.3
Units
°C/W °C/W °C/W
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April 2013
LQA10T200C, LQA10N200C
Electrical Specifications at TJ = 25 C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics per diode
IR Reverse current per diode VR = 200 V, TJ = 25 °C
VR = 200 V, TJ = 125 °C VF Forward voltage per diode IF = 5 A, TJ = 25 °C
IF = 5 A, TJ = 150 °C CJ Junction capacitance per VR = 10 V, 1 MHz
diode
Dynamic Characteristics per diode
- - 250 - 0.23 - 0.95 1.1 - 0.8 - 22 -
tRR
Reverse recovery time,
dIF/dt = 200 A/s TJ = 25 °C
- 13.9 -
per diode
VR= 130 V,
TJ = 125 °C
-
19.5
-
IF= 5 A
QRR
Reverse recovery charge, dIF/dt = 200 A/s TJ = 25 °C
- 15.6 25.5
per diode
VR= 130 V,
TJ = 125 °C
-
32.4
-
IF= 5 A
IRRM Maximum reverse
dIF/dt = 200 A/s TJ = 25 °C - 1.78 2.65
recovery current, per diode
VR= 130 V, IF= 5 A
TJ = 125 °C
-
2.6
-
S
Softness per diode =
tb ta
dIF/dt = 200 A/s VR= 130 V, IF= 5 A
TJ = 25 °C TJ = 125 °C
-
0.44 0.39
-
Units
A mA V V pF
ns ns
nC nC
A A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.)
IF 0
dIF/dt
tRR ta tb
IRRM
0.1xIRRM
Pulse generator
VR
L1
15V
+ Rg
Q1
D1 DUT
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2
Rev. 1.0 04/13
LQA10T200C, LQA10N200C
Electrical Specifications at TJ = 25 C (unless otherwise specified)
IF (A)
10 9 8 Tj=125C 7 6 5 4 Tj=25C 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF (V)
IF (A)
1.0 0.9 0.8 0.7 Tj=125C 0.6 0.5 0.4 0.3 0.2 0.1 Tj=25C 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF (V)
Cj (pF)
100
80
60
40
20
0 0 20 40 60 80 100 120 140 160 180 VR (V)
IF(AV) (A)
20 18 16 14 12 10
8 6 4 2 0
25
50 75 100 Case Temperature, TC (oC)
125
150
70
60 dIF/dt=500A/us 50
40
30 dIF/dt=200A/us 20
10
0 0 2 4 6 8 10
IF (A)
tRR (ns)
30
25 dIF/dt=200A/us
20
15 dIF/dt=500A/us 10
5
0 0 2 4 6 8 10 IF (A)
QRR (nC)
3
Rev. 1.0 04/13
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P (W)
IF(PEAK) (A)
LQA10T200C, LQA10N200C
30 25 20 15 10
5 0
25
50 75 100 Case Temperature, TC (oC)
125
150
20 18 duty cycle=10% 16 duty cycle=30% 14 duty cycle=50% 12 DC 10
8 6 4 2 0
25 50 75 100 125 150
TC(°C)
Zth(j-c)/Rth(j-c)
1
D= 0.5
D = 0.3
D= 0.1
0.1
D= 0.05
D= 0.02
0.01
D= 0.01 D=0.005
D=0.002
Single Pulse
0.001 1.E-06
1.E-05
LQA10x200C
1.E-04
1.E-03 t1(sec)
1.E-02
1.E-01
1.E+00
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4
Rev. 1.0 04/13
LQA10T200C, LQA10N200C
Dimensional Outline Drawings
TO-220AB Q
D D1
E
øP
A A1
b2
b e e1
L1
L c
A2
Millimeters
Dim MIN MAX
A 4.32 4.70
A1 1.11 1.38
A2 2.59 2.79
b 0.77 1.00
b2 1.23 1.36
C 0.34 0.47
D
14.71
15.75
D1 9.05 9.25
E 9.96 10.36
e 2.44 2.64
e1 4.98 5.18
L
12.70
14.22
L1 – 3.90
ØP 3.71 3.96
Q 2.54 2.90
Mechanical Mounting Method Screw through hole in package tab Clamp against package body
Maximum Torque / Pressure specification
1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2
TO-252 DPAK
Millim.