MDD5N50G

MDD5N50G N-channel MOSFET 500V MDD5N50G N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDD5N50G uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD5N50G is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V VDS = 550V ID = 4.4A RDS(ON) ≤ 1.4Ω @ Tjmax @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast TO-252 (DPAK) D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 550 ±30 4.4 2.8 17.6 70 0.56 4.5 230 -55~150 Unit V V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 110 1.8 Unit oC/W Feb.2010. Version 1.2 1 MagnaChip Semiconductor Ltd. MDD5N50G N-channel MOSFET 500V Ordering Information Part Number MDD5N50G Temp. Range -55~150oC Package DPAK Packing Reel RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Dra...